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Encapsulation of a photovoltaic element
| Details |
Inventors: Huschka, Hans; Hoffman, Winfried;
Assignee: Nukem GmbH (Hanau, DE)
Primary Examiner: Weisstuch; Aaron
Assistant Examiner:
Attorney, Agent or Firm: Beveridge, DeGrandi & Weilacher
The encapsulation of a photovoltaic element is described in which the outer surface is provided with a two layer protective film comprising a carbon film and a dielectric silicon compound film. |
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DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT The photovoltaic element (10) can be a thin-film cell on the basis of amorphous silicon or other semiconductor materials or thick film cells directly absorbant in the physical sense on the basis of mono- or polycrystalline silicon or other semiconductor materials indirectly absorbent in the physical sense.
The photovoltaic element has a known structure as described, for example, on the basis of a large number of examples in "Lippold/Trogisch/Friedrich, Solartechnik, Verlag fur Architektur und technisches Wissen, 1974".
According to the invention, the solar cell (10) is encapsulated over its whole area, namely by the protective films (12) and (14) in the embodiment.
Films (12) and (14) in accordance with the invention are films of amorphous carbon (a-C:H), crystalline carbon (c-C), amorphous silicon oxynitride (a-SiN.
sub.
x :H) or crystalline silicon nitride which are deposited from the gas phase on the outer surface of the photovoltaic element (10).
Deposition of the films (12) and (14) can now be described in detail on the basis of the following examples.
EXAMPLE A The finished solar cell (10)--which may also be a solar cell module--is arranged in a reaction space in order to be coated with amorphous carbon in a plasma glow discharge.
For this purpose high frequency in a range from 2.
3 to 13.
56 MHz is capacitively coupled.
The solar cell (10) is located on an ungrounded electrode and receives a bias voltage V.
sub.
e in the range from -10 V to -900 V.
The parameters should preferably be adjusted so that the bias voltage V.
sub.
e settles in the range -100 V.
The reaction container is connected to a hydrocarbon source such as methane, ethane, butane, propane, acetylene, ethylene, propylene, cyclohexane, octane, decyl hydride, xylan, naphthalene or similar compound, with the pressure in the reaction space being set to approx.
5 Pa (=5.
times.
10.
sup.
-5 bars).
The deposition rate should be between 0.
15 and 3 nm/s depending on the hydrocarbon used
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Semiconductor manufacture 
