Photomask blank and photomask |
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Fine screen and fine screen stack, their use and process for the manufacture of fine screens |
| The problem addressed by the invention is the creation of fine screens which combine the good ... |
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Inorganic porous membrane |
| What is claimed is: 1. A multilayer inorganic porous membrane consisting of a monolayer or ... |
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Spray-applied fluoropolymer films for gas separation membranes |
| What is claimed is: 1. A Process for preparing a gas separation membrane comprising a microporous ... |
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Gas drying apparatus and method |
| I have found that a certain arrangement of perforated plates will enhance the efficiency of ... |
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Integral honeycomb-like support of very thin single crystal slices |
| What is claimed is: 1. A method of forming very thin semiconductor slices which comprises the steps ... |
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Methods for producing hollow microspheres made from dispersed particle compositions |
| The present invention relates to hollow microspheres made from dispersed particle film forming ... |
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Methods for manufacturing a filter |
| What is claimed is: 1. A method for manufacturing a filter comprising a substrate, a membrane, and ... |
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Filter well and method for its manufacture |
| According to the present invention it has been found that a more efficient filter support surface ... |
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Filter |
| It is an object of the present invention to provide an improved filter for filtering fluid to flow ... |
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Etchant and array substrate having copper lines etched by the etchant
| Details |
Inventors: Jo, Gyoo-Chul; Chae, Ki-Sung;
Assignee: LG. Philips LCD Co., Ltd. (Seoul, KR)
Primary Examiner: Chen; Kin-Chan
Assistant Examiner:
Attorney, Agent or Firm: Morgan, Lewis & Bockius LLP
A method of forming an array substrate for use in a thin film transistor liquid crystal display (TFT-LCD) device includes forming a first metal layer on a substrate, patterning the first metal layer to form a gate line and a gate electrode extended from the gale line, forming a gate insulation layer on the substrate to cover the patterned first metal layer, forming an active layer on the gate insulation layer and over the gate electrode, forming an ohmic contact layer on the active layer, forming a second metal layer on the gate insulation layer to rover the ohmic contact layer and the active layer, forming a third copper metal layer on the second metal layer, simultaneously patterning the second metal layer and the third copper metal layer to form a double-layered data line, a double-layered source electrode and a double-layered drain electrode using an etchant that includes hydrogen peroxide (H.sub.2 O.sub.2), a H.sub.2 O.sub.2 stabilizer, and a neutral salt, and forming a pixel electrode contacting the double-layered drain electrode. |
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DETAILED DESCRIPTION Accordingly, the present invention is directed to an etchant and an array substrate having copper lines etched by the etchant that substantially obviates one or more of the problems due to limitations and disadvantages of the related art. An object of the present invention is to provide an etchant which simultaneously etches a double-layered metal layer. Another object of the present invention is to provide a method of forming an array substrate having copper lines and electrodes. Additional features and advantages of the invention will be set forth in the description which follows and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings. To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, the etchant and array substrate having copper lines etched by the etchant includes an etchant including hydrogen peroxide (H. sub. 2 O. sub. 2), and a mixed solution including at least one of an organic acid, an inorganic acid, and a neutral salt. In another aspect, a method of forming an array substrate for use in a thin film transistor liquid crystal display (TFT-LCD) device includes forming a first metal layer on a substrate, patterning the first metal layer to form a gate line and a gate electrode extended from the gate line, forming a gate insulation layer on the substrate to cover the patterned first metal layer, forming an active layer on the gate insulation layer and over the gate electrode, forming an ohmic contact layer on the active layer, forming a second metal layer on the gate insulation layer to cover the ohmic contact layer and the active layer, forming a third metal layer on the second metal layer, simultaneously patterning the second metal layer and the third metal layer to form a double-layered data line, a double-layered source electrode and a double-layered drain electrode using an etchant that includes hydrogen peroxide (H
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