High dielectric capacitors

DETAILED DESCRIPTION In view of the above discussion, it is an object of the present invention to provide high dielectric capacitors with reduced leakage currents.
Another object of the present invention is to provide high dielectric capacitors with increased capacitance per unit area over conventional high dielectric capacitors.
Still another object of the present invention is to provide such high dielectric capacitors without requiring a complicated and difficult fabrication process.
These and other objects of the present invention are provided by methods of fabricating a high dielectric capacitor which do not create a step difference where the high dielectric material is formed.
These methods include forming a first electrode layer on an integrated circuit device substrate and a layer of high dielectric material on the first electrode layer opposite the integrated circuit device substrate.
A second electrode layer is formed on the layer of high dielectric material opposite the first electrode layer.
The first electrode layer, the high dielectric layer and the second electrode layer are patterned to form a capacitor cell unit having a sidewall which extends from the first electrode past the layer of high dielectric material and to the second electrode layer.
An insulating spacer is formed on the sidewall of the capacitor cell unit so that the insulating spacer extends from the first electrode layer to the second electrode layer.
Thus, the capacitor is formed without having to form the high dielectric layer on a step.
By avoiding creation of a step difference when the high dielectric material is formed the weak deposition areas of conventional high dielectric capacitors may be avoided.
Thus, a more uniform high dielectric layer may be provided in capacitors fabricated according to the present invention.
This more uniform high dielectric layer may reduce the likelihood of leakage currents at the edges of the electrodes caused by weak deposition of the high dielectric material.
Thus, high dielectric capacitors fabricated according to the methods of the present invention may have reduced leakage currents over conventionally fabricated high dielectric capacitors and increased capacitance per unit area as a result