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High sensitivity, high resolution, solid state x-ray imaging device with barrier layer
| Details |
Inventors: Kingsley, Jack D.; Kwasnick, Robert F.; Wei, Ching-Yeu; Saia, Richard J.;
Assignee: General Electric Company (Schenectady, NY)
Primary Examiner: Hannaher; Constantine
Assistant Examiner: Glick; Edward J.
Attorney, Agent or Firm: Ingraham; Donald S., Snyder; Marvin
A radiation imager includes a photodetector array having topographically patterned surface features, which include support islands disposed over the active portion of one or more photodetectors in the photodetector array. A structured scintillator array having individual columnar scintillator elements is disposed in fixed relation to the photodetector array so that the individual scintillator elements are disposed on scintillator support islands. A barrier layer is disposed between the support islands and the photodetector array to minimize chemical interactions between the material forming the support island and the underlying photodetector array during the fabrication process. After the support islands have been patterned, the scintillator elements are grown by selectively depositing scintillator material on the support islands. |
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DETAILED DESCRIPTION In accordance with the present invention an x-ray imaging array comprises a photodetector array having topographically patterned surface features in combination with a structured scintillator array in which the scintillator array absorbs the incident x-rays and converts them to visible light which is sensed by the photodetector array.
The topographically patterned surface features on the photodetector array comprise scintillator support islands which are substantially aligned with one or more photodetectors in the array.
The scintillator array comprises individual, columnar-shaped scintillator elements disposed over the support islands so as to cause the luminescence generated within an individual scintillator element to be collected by its associated photodetector.
A barrier layer is disposed between at least the active portion of the photodetector and the support island, and a protective covering is preferably disposed between the support island and the scintillator element.
The barrier layer chemically separates the support islands from the photodetectors and preferably comprises an inorganic dielectric material which is substantially impervious to organic solvents, such as those used in the fabrication process for forming polyimide insulating layers.
Silicon dioxide advantageously used to form the barrier layer.
In accordance with one embodiment, each island support structure and associated scintillator element is aligned with the active area of one of the individual photodetectors of the array.
A scintillator material such as doped CsI is deposited on the support island under conditions which result in the scintillator material growing in a structured, columnar manner whereby a separate element of the structured scintillator material grows on each of the support islands.
The processes for forming the imaging device do not expose the device to temperatures in excess of 250.
degree.
C.
To provide response at spatial frequencies up to five line pairs per millimeter, the support islands are preferably 60 to 90 microns wide and located on 100 micron centers
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