 Sensor |
| The sensor of this invention which overcomes the above-discussed disadvantages and other numerous ... |
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| Flammable-gas sensor |
| In order to accomplish the objects stated above, according to one embodiment of the present ... |
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| Specimen transporting and processing system |
| The present invention is an improvement over prior art devices, and relates to a specimen ... |
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| Complementary field effect transistor and method of forming the same |
| In order to achieve the above-specified object, according to the present invention, there is ... |
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| Antenna structure for collection and detection of radiation |
| What is claimed is: 1. A hand held mechanical antenna structure collecting radiation for detection, ... |
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| Immunoassay for antigens |
| What is claimed is: 1. A method for the immunochemical determination of at least one antigen in a ... |
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| Sheetlike object such as microscope slide |
| OF THE INVENTION A first embodiment of slide pair assembly is shown in FIGS. 1A, 1B and 1C. R... |
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| Immobilization of active protein by cross-linking to inactive protein |
| The invention has two major inseparable aspects. One concerns novel immobilized active protein, and ... |
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| Yeast strains producing cellulolytic enzymes and methods and means for constructing them |
| In accordance with this invention described are yeast strains capable of producing cellulolytic ... |
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| Method of extracting antigens of bacteria |
| OF THE INVENTION Recent investigations have been pursued on the serotypes of Campylobacter ... |
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Metallic modified material of intermetallic compound and a process for the production of the same
| Details |
Inventors: Minomura, Shigeru;
Assignee:
Primary Examiner: Mack; John H.
Assistant Examiner: Leader; William
Attorney, Agent or Firm: Wenderoth, Lind & Ponack
The present invention is concerned with a new metallic modified material of intermetallic compound, which has the same chemical composition as an intermetallic compound semi-conductor with a zincblende-type or wurtzite-type crystalline structure and further has a rocksalt-type crystalline structure and which is stable at room temperature under atmospheric pressure to a high pressure. |
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DETAILED DESCRIPTION OF THE INVENTION In accordance with the present invention, there is provided a metallic modified material (metallic modifications) of intermetallic compound, which has the same composition as an intermetallic compound semiconductor with a zincblende type or wurtzite type crystalline structure and further has a rocksalt-type crystalline structure and which is stable at room temperature to a predetermined temperature under atmospheric pressure to high pressures.
In the present invention, the intermetallic compound is selected from the group consisting of Group III-V compounds, Group II-VI compounds, Group I-VII compounds, Group IV-VI compound-containing mixtures with these compounds and mixtures thereof.
The deposition can be carried out in the presence of at least one reactive gaseous composition comprising at least one component selected from Group II, III, IV, V and VI elements.
In one embodiment of the present invention, from a target of a zincblende-type semiconductor consisting of two components selected from Group III elements and Group V elements is deposited the metallic modified material of intermetallic compound having the same chemical composition as the target and a rocksalt-type crystalline structure on a substrate by tetrode sputtering.
In another embodiment of the present invention, from a target consisting of a combination of two kinds of semiconductors of Group III-V compounds with other Group III-V compounds, Group IV elements or Group II-VI compounds is deposited a metallic modified material of intermetallic compound consisting of at least three components, the content of the each component being 1% or more, and having a rocksalt-type crystalline structure on a substrate by tetrode sputtering.
In a further embodiment of the present invention, from a target consisting of a combination of two kinds of semiconductors of Group III-V compounds with other Group III-V compounds, Group IV elements or Group II-VI compounds and at least one reactive gaseous composition comprising at least one component selected from the above described elements is deposited a metallic modified material of intermetallic compound consisting of at least the three components, the content of the each component being 1% or more, and having a rocksalt-type crystalline structure on a substrate by discharge using a tetrode sputtering apparatus
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Semiconductor manufacture 
