Home | Links | Contact Us | More About Intellectual Property | Bookmark

Search patents:

Home

Semiconductor manufacture

Method-and-apparatus-for-applying-a-plurality-of-superposed-layers-to-a-web-by-curtain-coating

Raised source/drain using recess etch of polysilicon

Accordingly, it is a primary object of the present invention to provide a preferred process for ...

Method of producing a metal oxide semiconductor device with raised source/drain

There is a need for a method of making a semiconductor device with raised source/drain structure, ...

Method for forming shallow source/drain extension for MOS transistor

OF THE INVENTION". BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic diagram of a semiconductor ...

Laser texturing

The present invention is directed to providing a contactless technique for imparting a texture to a ...

Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness

FIG. 2 shows a trenched DMOS transistor structure in accordance with the present invention. The ...

Semiconductor device and power converter using same

The semiconductor device according to the present invention has a pair of main surfaces. On one ...

Self-aligned channel stop for trench-isolated island

In accordance with the present invention, the need to provide a separation region between the ...

DMOS power transistors with reduced number of contacts using integrated body-source connections

In accordance with the present invention, two topologically different microcells are provided. Each ...

Trench depletion MOSFET

The present invention is a trench power MOSFET with a unique structure which overcomes the above-...

***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST*** *** NO IMAGES AVAILABLE***

Description:...

Method and apparatus for applying a plurality of superposed layers to a web by curtain coating

Details

Inventors: Kerkhofs, Jacques G.;
Assignee: AGFA-GEVAERT N.V. (Mortsel, BE)
Primary Examiner: Beck; Shrive P.
Assistant Examiner:
Attorney, Agent or Firm: Daniel; William J.

Method and apparatus for applying a plurality of superposed layers to a web by curtain coating in which only some of the plurality of layers are, and in the extreme case only one layer is, in contact with the curtain guides. The width of the remaining layers is smaller than the width determined by the curtain guides, and preferably smaller than the width of the web.

DETAILED DESCRIPTION We claim: 1.
In a method of applying to a travelling web a plurality of layers of at least one flowable composition, comprising moving said web along a predetermined pathm, delivering such flowable compositions to a plurality of slot-like orifices to form a plurality of distinct flowing layers of such compositions, flowing said layers into face to face contact with one another to form a composite layer and delivering said composite layer as a free-falling curtain onto said web at a locus extending transversely of said path, said curtain being held in said locus by adherent contact of its lateral edges with curtain guides, said curtain falling on said moving web, the improvement wherein at least one of said plurality of layers has a width greater than the width of the web, and at least one of said plurality of layers has a width smaller than the overall width of the curtain whereby at least one but not all of said plurality of layers are in adherent contact with the curtain guides.
2.
Method according to claim 1, wherein the width of the portion of the curtain that contains all layers is substantially equal to the width of the web.
3.
Method according to claim 1, wherein the width of the portion of the curtain that contains all the layers is smaller than the width of the web.
4.
Method according to claim 3, wherein the web has knurled marginal regions and said width of said portion of the curtain corresponds with the width measured on the web between said knurled marginal regions.
5.
Method according to claim 1, wherein only one layer of the composite curtain has a width sufficient to contact its lateral edges with the curtain guides, all the other layers have a lesser width.
6.
Method according to claim 5, wherein the portion of said one, broader layer that overflows the edges of the web is collected and recirculated.
7.
Method according to claim 5, wherein the rate of flow of said one layer of greater width is greater at the edge regions of the curtain than at the central region of the curtain

Related patents

	Process and apparatus for coating the surfaces of containers with a material OF THE PREFERRED EMBODIMENTS Containers or bottles to be coated are conveyed along a suitable line (not shown) and then transferred by a loading means (not shown) into ...
	Non-woven fabric and method for producing same It is a primary object of the present invention to eliminate the above drawbacks of the prior art and to provide a unique non-woven fabric and a method for producing the ...
	Fence wire location marker A location indicator or marker for marking and indicating the location of substantially horizontally extending wires includes a generally planar tab or relatively thin, ...
	Process for fabricating a control gate for a floating gate FET It is therefore, an object of the present invention to provide an improved method of fabricating a floating gate field effect transistor. A further object of the present ...
	Apparatus for mixing plastics In general, the present invention consists of providing the mixing head with two plates mounted at a distance from each other and attached to the supply and return line. ...
	Fluid spreading apparatus In accordance with the present invention a new and improved fluid spreading apparatus is disclosed as including a non-swinging or fixed spray bar carried transversely on ...
	Device in or for high-pressure cleaning units for heating the water by circulation I claim: 1. High-pressure cleaning apparatus having two operating modes comprising: an ejection nozzle for discharging fluid; a high-pressure pump having delivery and ...
	High voltage MOS structure The present invention relates generally to insulated gate field effect transistors and more specifically to an improved high voltage insulated gate field effect ...
	Method of making self-aligned remote polysilicon contacts In accordance with the present invention, shallow source and drain contacts are produced by the steps of (1) depositing a polysilicon layer over the entire surface of a ...
	Self-aligned MOSFET gate/source/drain salicide formation The present invention provides a method of fabricating a MOSFET device structure in a silicon substrate. The MOSFET device structure includes planarized trench isolation ...

0.014
Archive: All patents - Links Copyright (c)2006 Eipa-patents.org - All rights reserved