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Method for making a silicon field emission emitter
| Details |
Inventors: Lee, Kang-ok; Lee, Cheon-kyu;
Assignee: Samsung Display Devices Co., Ltd. (Kyunggi-do, KR)
Primary Examiner: Breneman; R. Bruce
Assistant Examiner: Whipple; Matthew
Attorney, Agent or Firm: Christie, Parker & Hale
There is disclosed a silicon field emission emitter and a method for making a silicon field emission emitter which has a good electronic characteristic and a simplified making process. The silicon field emission emitter in accordance with the embodiment of the present invention includes a silicon substrate of high density, an insulating layer on the silicon substrate of high density, a cavity formed in the insulating layer, an emitter formed with the silicon substrate of high density in a body in the cavity, and a gate electrode formed on the insulating layer. The insulating layer is made of the thermal oxide film having the thickness of 4000 angstroms and the gate electrode coats the emitter tip. |
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DETAILED DESCRIPTION Accordingly, the present invention is directed to an emitter which substantially obviates one or more of the problems due to limitations and disadvantages of the prior art.
The present invention is directed to a silicon field emission emitter and a method for making a silicon field emission emitter which has a good electronic characteristic and a simplified making process.
To achieve this and other advantages in accordance with the purpose of the invention, as embodied and broadly described herein, in a variation, a silicon field emission emitter comprises a conductive substrate doped with impurities of high density, an emitter having a conical shape and formed with said substrate in a body, a thermal oxide film of SiO.
sub.
2 formed on said substrate to coat said cone-shaped emitter and to make a tip of an emitter be exposed, and a gate electrode formed on said thermal oxide films of SiO.
sub.
2 and for surrounding the exposed emitter to form a cavity between said exposed emitter and the gate electrode approximately at the same level as the level of said exposed emitter.
In another variation, a method for making a silicon field emission emitter comprising the steps of forming a thermal oxide mask by photo etching after oxidation of a highly doped silicon substrate, etching the silicon substrate to form a cone-shaped emitter by using the thermal oxide mask, sharpening the emitter having a plane tip be pointed and forming a thin thermal oxide film serving as an insulating layer, depositing to form a gate electrode to surround the emitter tip by sputtering on the thermal oxide film, and wet etching to expose the tip of the cone-shaped emitter.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate one embodiment of the invention and together with the description, serve to explain the principles of the invention
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Semiconductor manufacture 
