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Method for producing an active matrix substrate
| Details |
Inventors: Mitani, Yasuhiro; Ikubo, Katsumara; Shimada, Yasunori; Tanaka, Hirohisa; Morimoto, Hiroshi; Nishi, Yutaka; Yamamoto, Tomohiko; Nishimura, Kenichi;
Assignee: Sharp Kabushiki Kaisha (Osaka, JP)
Primary Examiner: Wilczewski; Mary
Assistant Examiner:
Attorney, Agent or Firm: Nixon & Vanderhye
A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes. |
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DETAILED DESCRIPTION The method for producing an active matrix substrate of this invention, which overcomes the above-discussed and numerous other disadvantages and deficiencies of the prior art, wherein the active matrix substrate uses a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, the method comprising the steps of patterning the channel protective layer, injecting ions into the semiconductor layer through a resist remaining after the patterning formation of the channel protective layer, so as to form a contact layer.
In a preferred embodiment, the contact layer is formed by patterning the semiconductor layer.
In a preferred embodiment, the resist is formed on the channel protective layer by patterning and ions are implanting into the semiconductor layer through the resist, and the resist lifts off to form the drain electrode and source electrode in patterns.
As an alternative, the thin film transistor has a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer and the semiconductor layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer and the semiconductor layer, the method comprising the steps of patterning a resist on the semiconductor layer, implanting ions into the semiconductor layer through the resist, so as to form a contact layer, forming an electroconductive layer used for the drain electrode and source electrode without removing the resist, and lifting off the resist to form the drain electrode and source electrode separately
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