 Operational amplifier with stabilized DC operations |
| Embodiment 1 FIG. 1 shows a first embodiment of a CMOS operational amplifier according to our ... |
|
| Low power digital CMOS compatible bandgap reference |
| The following description of the invention will often refer to exact numerical values used in ... |
|
| Touchpad providing screen cursor/pointer movement control |
| What is claimed is: 1. A capacitance touchpad for determining user-authorization of a device having ... |
|
| High-speed on-chip windowed centroiding using photodiode-based CMOS imager |
| The present disclosure describes an on-focal plane centroid computation circuit that is compatible ... |
|
| Parallel SELEX.TM. |
| OF THE INVENTION The Parallel SELEX.TM. process provides product libraries which are formed by ... |
|
| Method of making a magnetoelectronic device |
| An object of the present invention therefore is to provide an improved architecture for a hybrid H... |
|
| Method of manufacturing a semiconductor device having interconnetion patterns |
| One object of the present invention is to form a very minute interconnection pattern having line ... |
|
| Photoconductive layer having hydrophilic and hydrophobic moieties |
| An object of the present invention is to provide a photosensitive member, in particular, an ... |
|
| Immunoassay for CK-MB using bound and soluble antibodies |
| I claim: 1. An immunoinhibition assay for CK-MB comprising the steps of: (a) forming a first ... |
|
|
Method for the plasma deposition of hydrogenated, amorphous carbon using predetermined retention times of gaseous hydrocarbons
| Details |
Inventors: Birkle, Siegfried; Kammermaier, Johann; Schulte, Rolf; Winnacker, Albrecht; Rittmayer, Gerhard;
Assignee: Siemens Aktiengesellschaft (Berlin and Munich, DE)
Primary Examiner: Hearn; Brian E.
Assistant Examiner: Everhart; B.
Attorney, Agent or Firm: Kenyon & Kenyon
The invention provides a method for making a new semiconductor base material comprising thin layers of amorphous, hydrogenous carbon (a-c:H) with a specific electrical resistance of between 10.sup.1 and 10.sup.8 .OMEGA..cm and a charge carrier concentration (n+p) of between 10.sup.10 and 10.sup.18 cm.sup.-3, respectively at room temperature. The new semiconductor base material can be manufactured in thin layer technology with the application of band processes and exhibits a charge carrier mobility of at least 1 cm.sup.2.v.sup.-1.s.sup.-1. |
|
DETAILED DESCRIPTION OF THE INVENTION Up until now, semiconductive thin layers with an n and p charge carrier mobility of over 1 cm.
sup.
2 .
multidot.
V.
sup.
-1 .
multidot.
s.
sup.
-1, as exhibited by the material according to the invention, have not been known in the case of amorphous semiconductors in the undoped state.
In a semiconductive material, a high mobility of both comparable with crystalline semiconductor materials, such as Si and GaAs types of charge carriers, which is significant for many applications, exists when the ratio of the corresponding Hall constants to the specific electrical resistance is as large as possible.
This is the case in the semiconductor base material according to the invention, i.
e.
special a-C:H.
In this material, where clearly fewer than 68% of the carbon atoms exhibit diamond-like, tetrahedral bonds (sp.
sup.
3 -hybridization) and clearly more than 30% exhibit graphitic, trigonal bonds (sp.
sup.
2 -hybridization), which has a hydrogen contents of 10 to 30 atomic percentage, the requirement for a high charge carrier mobility is specifically fulfilled through a fixed concentration of the n and p charge carriers and a fixed specific electrical resistance, to be precise up to an optimum.
With a diminishing numerical value of the product of the charge carrier concentration and of the specific electrical resistance results an increasing ratio of the Hall constant to the specific electrical resistance, and thus a rising mobility of the charge carriers in the a-C:H layer.
Advantageously, the semiconductor material according to the invention has a specific electrical resistance of between 10.
sup.
2 and 5.
multidot.
10.
sup.
7 .
OMEGA.
.
multidot.
cm approximately.
Such a material possesses a mobility of the n and p charge carriers of over 10.
sup.
2 cm.
sup.
2 .
multidot.
V.
sup.
-1 .
multidot.
s.
sup.
-1.
Preferably, the specific electrical resistance lies approximately between 5.
multidot.
10.
sup.
3 and 5.
multidot.
10.
sup.
6 .
OMEGA.
.
multidot.
cm.
In such a material, the n and p charge carrier mobility attains values of over 10
|
|
Semiconductor manufacture 
