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Semiconductor manufacture

Method-of-manufacturing-a-semiconductor-device-utilizing-etch-and-refill-to-form-isolation-regions

Method of forming a flash EEPROM device by employing polysilicon sidewall spacer as an erase gate

What is claimed is: 1. A method of fabricating a Flash EEPROM device having an array of cells, the ...

Etchant and array substrate having copper lines etched by the etchant

Accordingly, the present invention is directed to an etchant and an array substrate having copper ...

Micromechanical sensor

We claim: 1. A micromechanical sensor comprising a plurality of cantilever sensing elements ...

Structure or construction for mounting a pressure detector

The main object of the present invention is to solve the above-mentioned problem encountered when ...

Process for applying a composite insulative coating to a substrate

What is claimed is: 1. A process for applying an adherent electrically insulative moisture-...

Shielded energy transmitting surgical instrument and methods therefor

Accordingly, it is a primary object of the present invention to overcome the above mentioned ...

Separator for an alkaline cell and a method of producing the separator

What is claimed is: 1. A method of producing a separator for an alkaline cell, comprising the steps ...

Coatings for cutting implements

We claim: 1. A method of treating an edged cutting implement which comprises depositing a coating ...

Press-cushion sheet

We claim: 1. A press-cushion sheet comprising a multiple-ply woven fabric having three- to six-ply ...

Membrane separation of hydrocarbons

OF THE INVENTION As was previously discussed, the present invention relates to a process for the ...

Method of manufacturing a semiconductor device utilizing etch and refill to form isolation regions

Details

Inventors: Muramatsu, Akira;
Assignee: Hitachi, Ltd. (Tokyo, JP)
Primary Examiner: Rutledge; L. Dewayne
Assistant Examiner: Saba; W. G.
Attorney, Agent or Firm: Antonelli, Terry & Wands

A method of manufacturing a semiconductor device characterized in that after a fine groove has been formed in the surface of a semiconductor layer by dry etching, an insulating region is formed so as to fill up the fine groove.

DETAILED DESCRIPTION A first object of this invention is to provide a novel method of forming an isolation region as is free from the disadvantage described above.
A second object of this invention is to provide a method of manufacturing a semiconductor device as employs the novel method of forming an isolation region.

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