 Polyphenylene oligomers and polymers |
| OF THE INVENTION Preferably, the oligomers and polymers and corresponding starting monomers of the ... |
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| Method for purifying dimethyl sulphoxide (DMSO) |
| We claim: 1. Process for the purification of dimethy sulphoxide (DMSO) to decrease the content of ... |
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| Ultrapurification of organic solvents |
| OF THE INVENTION For purposes of the present invention, the following definitions are used. S... |
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| Process for the purification of virtually anhydrous organic liquids |
| We claim: 1. Process for purification of a virtually anhydrous organic liquid other than dimethyl ... |
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| Trialkyl Group VA metal compounds |
| OF THE INVENTION As used throughout this specification, the following abbreviations shall have the ... |
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| Process and auxiliary device for fabricating semiconductor devices |
| A process for fabricating individual semiconductor devices with mesa structures from a starting ... |
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| Process for manufacturing discrete electronic devices |
| OF THE INVENTION FIG. 1a shows an SOI substrate with a first silicon layer 10, an insulator layer 1... |
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Method of peeling off and method of manufacturing semiconductor device
| Details |
Inventors: Takayama, Toru; Maruyama, Junya; Yamazaki, Shunpei;
Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken, JP)
Primary Examiner: Ghyka; Alexander
Assistant Examiner:
Attorney, Agent or Firm: Robinson; Eric J., Robinson Intellectual Property Law Office, P.C.
The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to provide a lightweight semiconductor device by sticking a peeled off layer to a variety of substrates and its manufacturing method. Especially, the invention aims to provide a lightweight semiconductor device by sticking a variety of elements such as TFT to a flexible film and its manufacturing method. Even in the case a first material layer 11 is formed on a substrate and a second material layer 12 is formed adjacently to the foregoing first material layer 11, and further, layered film formation, heating treatment at 500° C. or higher or laser beam radiating treatment is carried out, if the first material layer has a tensile stress before the peeling and the second material layer has a compressive stress, excellent separation can easily be carried out by physical means in the interlayer or interface of the second material layer 12. |
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DETAILED DESCRIPTION 1.
A method for peeling comprising the steps of: forming a multilayer composed of a first material layer over a substrate and a second material layer on said first material layer over said substrate; heating said multilayer so that said first material layer has a tensile stress and said second material layer has a compressive stress; and peeling said second material layer from said substrate after said heating step by physical means at an interface of said first material layer and said second material layers, wherein said second material layer has a compressive stress in a range of -1 to -1×1010 (Dyne/cm2) before said peeling step.
2.
The method according to claim 1, wherein said first material layer has a tensile stress in a range of 1 to 1×1010 (Dyne/cm2) immediately before said peeling step.
3.
A method for peeling comprising the steps of: forming a multilayer composed of a first material layer over a substrate and a second material layer on said first material layer over said substrate; heating said multilayer so that said second material layer has a compressive stress; and peeling said second material layer from said substrate after said heating step by physical means at an interface of said first material layer and said second material layer, wherein said second material layer has a compressive stress in a range of -1 to -1×1010 (Dyne/cm2) before said peeling step.
4.
The method according to claim 3, wherein said first material layer has a tensile stress in a range of 1 to 1×1010 (Dyne/cm2) immediately before said peeling step.
5.
The method according to claim 3, wherein said first material layer has a compressive stress immediately after said forming step and has a tensile stress immediately before said peeling step.
6.
A method for peeling comprising the steps of: forming a multilayer composed of a first material layer over a substrate and a second material layer on said first material layer over said substrate; heating said multilayer so that said first material layer has a tensile stress and said second material layer has a compressive stress; sticking a supporting body to said multilayer after said heating step; and peeling said second material layer from said substrate by physical means at an interface of said first material layer and said second material layers, wherein said second material layer has a compressive stress in a range of -1 to -1×1010 (Dyne/cm2) before said peeling step
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Semiconductor manufacture 
