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Method of producing a metal oxide semiconductor device with raised source/drain
| Details |
Inventors: Lin, Ming-Ren;
Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA)
Primary Examiner: Niebling; John F.
Assistant Examiner: Hack; Jonathan
Attorney, Agent or Firm:
A semiconductor device and a method of making the device with a raised source/drain has a semiconductive material that is non-selectively deposited in a layer over the device area. The semiconductive material is then etched to form spacers that will form the raised soure/drain areas following doping of the spacers. The gate of the semiconductor device is protected during the etching by an etch stop layer that is grown or deposited over the structure to be protected, e.g., the gate, prior to the deposition of the semiconductive material layer. Lightly doped drain ion implantation is performed prior to the formation of the spacers, and source-drain ion implantation is performed preferably after the formation of the spacers, to create the shallow junctions. |
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DETAILED DESCRIPTION There is a need for a method of making a semiconductor device with raised source/drain structure, in a readily manufacturable process that is cost effective.
This and other needs are met by an embodiment of the present invention which provides a method of forming a semiconductor device with raised source and drain, comprising the steps of providing an etch stop layer on a gate of the semiconductor device, depositing a layer of semiconductor material over the semiconductor device, and etching the semiconductor layer to form spacers of a desired width and thickness.
The etch stop layer protects the gate during the etching.
The spacers are doped to create the raised source and drain.
In certain embodiments, the semiconductor layer is made of amorphous silicon or polysilicon.
In alternative embodiments, the gate material is different from the spacer material such that the etch stop layer is not necessary.
In these embodiments of the present invention, the two materials selected as the gate and the semiconductor material should have good selectivity.
Since the steps involved in forming the spacers comprise depositing of the semiconductor layer and etching, a simpler and more cost effective manner of forming the raised source/drain is provided, in comparison to the conventional selective epi deposition method.
Also, there is a lower thermal budget required for the method of the present invention than for the selective epi deposition method of the prior art.
The earlier stated needs are also met by another embodiment of the present invention which provides a method of forming a semiconductor device with raised source and drain, comprising the steps of non-selectively depositing a layer of semiconductor material over the semiconductor device, etching the semiconductor layer to form spacers of a desired width and thickness, and doping the spacers to create the raised source and drain.
The earlier stated needs are also met by another embodiment which provides a semiconductor device having a raised source/drain, comprising a substrate with shallow junctions, a gate, and a raised source/drain formed of non-selectively deposited semiconductive material on the substrate
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Semiconductor manufacture 
