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Semiconductor manufacture

Method-of-production-of-amorphous-hydrogenated-carbon-layer

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Method of production of amorphous hydrogenated carbon layer

Details

Inventors: Osawa, Izumi; Iino, Shuji; Hotomi, Hideo;
Assignee: Minolta Camera Kabushiki Kaisha (Osaka, JP)
Primary Examiner: Niebling; John F.
Assistant Examiner: Marquis; Steven P.
Attorney, Agent or Firm: Burns, Doane, Swecker & Mathis

The present invention provides a method of plasma-polymerization at low temperature (from normal temperature to about 100.degree. C.) and that at low frequency.

DETAILED DESCRIPTION The object of the invention is to provide a method of production of an amorphous hydrogenated carbon layer which can be formed by plasma-polymerization of organic compounds of hydrocarbon series at low temperature (around normal temperatures to about 100.
degree.
C.
).
The object of the invention is achieved by polymerizing organic compounds of hydrocarbon series which have an unsaturated bond and a boiling point of within the range of between -50.
degree.
C.
and +15.
degree.
C.
or which have an unsaturated bond and three or four carbons in a vacuum by means of a plasma-discharge decomposition method at low frequency within the range of between 10 KHz and 1000 KHz.

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