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Photomask blank and photomask
| Details |
Inventors: Kaneki, Satoru; Tabuchi, Kazuhiro;
Assignee: Dai Nippon Insatsu Kabushiki Kaisha (Tokyo, JP)
Primary Examiner:
Assistant Examiner:
Attorney, Agent or Firm:
A photomask is fabricated by forming, in a photomask (hard mask) produced by forming a patternized film of a masking material comprising (a) a layer of metallic chromium and (b) a layer of chromium oxides superposed thereon, a film of a translucent and electroconductive material selected from Nb, Ta and V, between the masking film and the transparent substrate. At the time of pattern transferring by photolithography, dropping off of parts of the pattern of this photomask does not occur even when it includes isolated island-like parts, and, at the time of inspection by electron-beam exposure, the precision of inspection does not lower. This photomask is obtained by patternizing by selective etching the masking film of a photomask blank produced by successively forming, on the transparent substrate, the translucent and electroconductive film and the masking film. |
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DETAILED DESCRIPTION It is an object of this invention to overcome the problems encountered with respect to known hard masks as described above and thereby to provide photomask blanks and photomasks having high durability and, moreover, excellent applicability to the electron-beam inspection.
This invention contemplates the achievement of the above stated object by a multilayer construction produced by forming, on a transparent substrate as used in the prior art, a translucent film having electroconductivity by sputtering or vacuum evaporation and further forming thereon a thin film of a material used heretofore as a material for masks such as metallic chromium, and chromium oxide.
According to this invention in one aspect thereof, briefly summarized, there is provided a photomask blank comprising a transparent substrate, a metallic film of a translucent and electroconductive material selected from the group consisting of Nb, Ta and V, and a masking film comprising (a) a layer of metallic chromium and (b) a layer of chromium oxide superposed thereon.
According to this invention in another aspect thereof, there is provided a photomask of a general construction as described above in which the masking film is patternized.
Throughout this specification, the terms "translucent" (or light-transmittancy" or "light-transmissive") and "masking" (or "light-screening") are intended to mean these characteristics with respect to light used in photolithography in a broad sense.
The nature, utility, and further features of this invention will be more clearly apparent from the following detailed description when read in conjunction with the accompanying drawing, briefly described below.
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Semiconductor manufacture 
