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| Purified tetraethoxysilane and method of purifying |
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| Low dielectric resin composition |
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| Method for manufacturing siloxane compounds |
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| Method for purifying dimethyl sulphoxide (DMSO) |
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Plasma reactor using inductive RF coupling, and processes
| Details |
Inventors: Collins, Kenneth S.; Yang, Chan-Lon; Wong, Jerry Yuen-Kui; Marks, Jeffrey; Keswick, Peter R.; Groechel, David W.; Roderick, Craig A.; Trow, John R.; Ishikawa, Tetsuya; Pinson, II, Jay D.; Lei, Lawrence Chang-Lai; Toshima, Masato M.; Yin, Gerald Zheyao;
Assignee: Applied Materials, Inc. (Santa Clara, CA)
Primary Examiner: Dang; Thi
Assistant Examiner:
Attorney, Agent or Firm: Morris; Birgit, Bach; Joseph
A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. |
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DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT(S) 1.
OVERVIEW FIGS.
1-3 are schematic sectional views of a plasma reactor chamber system 10 for processing a semiconductor wafer 5 which uses an inductive plasma source arrangement, a magnetically-enhanced plasma source arrangement, a capacitively coupled bias arrangement and other aspects of our present invention.
The three figures illustrate preferred and alternative features of our system; three figures are used because of drawing space limitations.
The exemplary chamber is a modification of that depicted in our co-pending incorporated continuation-in-part patent applications, which include an integral transmission line structure.
The salient features of our invention are applicable generally to plasma reactor chambers.
Furthermore, it will be understood by those of skill in the art and from the description below that various features of the invention which cooperatively enhance the performance of the reactor system may be used separately or may be selectively omitted from the system.
For example, the process conditions provided by the inductive plasma source arrangement and capacitively coupled bias source arrangement frequently eliminate any need for magnetic enhancement.
The exemplary system 10 includes a vacuum chamber housing 11, formed of anodized aluminum or other suitable material, having sidewalls 12 and top and bottom walls 13 and 14.
Anodized aluminum is preferred because it suppresses arcing and sputtering.
However, other materials such as bare aluminum with or without a process-compatible liner of polymer or quartz or ceramic can be used.
Top wall 13 has a central opening 15 between a lower chamber wafer processing section 16B defined between walls 12--12 and an upper chamber source section 16A defined by a dome 17.
The dome may be configured as an inverted single- or double-walled cup which is formed of dielectric material such as, preferably, quartz or several other dielectric materials, including alumina and alpha-alumina (sapphire)
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Semiconductor manufacture 
