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Method for the treatment of substrates
The invention provides methods and apparatus for sterilizing articles, for sterilizing hazardous biological waste, and for treating various substrates using a gas plasma....
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ESD protection circuit
According to the present invention, ESD protection is increased by providing one of the following structures. First, the P-channel pull-up output transistor can be ...
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Electrostatic protection structure for MOS circuits
The present invention is directed to an ESD protection circuit which includes a pair of lateral NPN transistors each having an emitter, collector and base. The ...
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CMOS output circuit with enhanced ESD protection using drain side implantation
A principal object of the present invention is to provide an effective and very manufacturable output circuit that protects a CMOS integrated circuit from electrostatic ...
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Pressure alarm in water-sealed camera
What is claimed is: 1. A camera adapted to be sealed against water, said camera comprising: detecting means for detecting the presence of water having a hydraulic ...
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Method for the plasma deposition of hydrogenated, amorphous carbon using predetermined retention times of gaseous hydrocarbons
OF THE INVENTION Up until now, semiconductive thin layers with an n and p charge carrier mobility of over 1 cm.sup.2 .multidot.V.sup.-1 .multidot.s.sup.-1, as exhibited ...
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Surface treatment apparatus
Applicant's invention is an improved plating treatment system including an improved fluid transfer assembly and workstation, as well as an improved plating treatment ...
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Composition and process for forming electrically insulating thin films
OF THE INVENTION The present invention relates to an insulating thin film-forming composition that comprises (A) a resin selected from the group consisting of ...
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Low dielectric constant porous films
OF THE PREFERRED EMBODIMENT Accordingly, nanoporous silica dielectric films having a dielectric constant, or k value, ranging from about 1.5 to about 3.8, can be ...
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Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
The method of the present invention provides such a new and improved low-k material deposition process. The process is particularly useful in the manufacture of sub-0.2 ...
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