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Semiconductor device and method of manufacturing the same
| Details |
Inventors: Yamamoto, Hideaki; Seki, Koichi; Tanaka, Toshihiro; Sasano, Akira; Tsukada, Toshihisa; Shimomoto, Yasuharu; Nakano, Toshio; Kanamori, Hideto;
Assignee: Hitachi, Ltd. (Tokyo, JP)
Primary Examiner: Edlow; Martin H.
Assistant Examiner: Limanek; Robert P.
Attorney, Agent or Firm: Antonelli, Terry & Wands
A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and right shielding film. |
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DETAILED DESCRIPTION We claim: 1.
A semiconductor device comprising a substrate; a semiconductor layer made of amorphous silicon formed over said substrate; a transparent conductive layer formed by an interfacial reaction between the amorphous silicon layer and a portion of a metallic film directly formed on the amorphous silicon layer; and a reamining portion of said metallic film extending on said transparent conductive layer and being patterned to selectively expose a predetermined surface portion of said transparent conductive layer so that only said predetermined surface portion of said transparent conductive layer provides an exposed surface that serves as a light receiving window on which incident light directly impinges.
2.
A semiconductor device of according to claim 1, wherein at least the portion of said metallic film that reacts with the amorphous silicon layer to form said transparent conductive layer contains at least one element selected from the group consisting of Cr, Mo, W, Ti, V, Zr, Nb, Ta, Hf, Ni, Pd, Co, Pt and Rh.
3.
A semiconductor device according to claim 1, wherein an under electrode is formed on said substrate and said semiconductor layer is formed on the under electrode.
4.
A semiconductor device according to claim 1, wherein the remaining patterned portion of said metallic film serves as an electrode.
5.
A semiconductor device according to claim 4, wherein said electrode has a stripe form.
6.
A semiconductor device according to claim 1, wherein the remaining patterned portion of said metallic film serves as a shading layer surrounding said light receiving window.
7.
A semiconductor device comprising: a substrate; a semiconductor layer made of amorphous silicon formed over said substrate; a transparent conductive layer fromed on said semiconductor layer, said transparent conductive layer consisting of an interfacial reaction product of the amorphous silicon of said semionductor layer and a metallic film formed on said semiconductor layer; and a portion of said metallic film being disposed on said transparent conductive layer, said portion of said metallic film being patterned to selectively expose a predetermined surface portion of said transparent conductive layer so that only said predetermined surface portion of said transparent conductive layer provides an exposed surface that serves a light receiving window on which incident light directly impinges
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