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Stress compensation composition and semiconductor component formed using the stress compensation composition
| Details |
Inventors: Keser, Lizabeth Ann; Fang, Treliant;
Assignee: Motorola, Inc. (Schaumburg, IL)
Primary Examiner: Potter; Roy
Assistant Examiner:
Attorney, Agent or Firm: Vo; Kim-Marie
A semiconductor component (10) having a photodefinable stress compensation layer (21) and composition for the stress compensation material. The photodefinable stress compensation material is formed on a semiconductor wafer (11) and openings (22) are made photolithographically. Conductive bumps (26) are then disposed thereon and additional conductive bumps (28) are formed on the original conductive bumps (26). The photodefinable stress compensation material is composed of a photoinitiator, an epoxy having a first index of refraction, a diluent, and a filler. The indices of refraction of the epoxy-diluent combination and the filler are approximately equal. Alternatively, the photodefinable stress compensation material can be formed on a semiconductor wafer (11) having conductive bumps (46) disposed thereon. Openings (49) are formed in the stress compensation layer (47) to expose the conductive bumps (46). Additional conductive bumps (51) are formed on the original conductive bumps (46). |
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DETAILED DESCRIPTION OF THE DRAWINGS Generally, the present invention provides a semiconductor component having a photosensitive stress compensation layer, a method of manufacturing the semiconductor component, and a composition of the photosensitive stress compensation material.
The photosensitive stress compensation material enables formation of conductive bumps having bump heights up to 400 micrometers (.
sup.
.
mu.
m) without increasing process complexity or the bondpad footprint.
The stress compensation material of the present invention is sensitive to light, therefore, openings or vias can be formed in the material using photoimageable techniques.
Because the material is photosensitive, it is also referred to as being photodefinable.
In addition to this property, the photosensitive stress compensation material has a Coefficient of Thermal Expansion (CTE) that matches that of the solder joints formed between the substrate and an underbump material or a bond pad.
One aspect of the present invention is the composition of the photodefinable stress compensation layer.
It should be understood that the properties of the stress compensation material are influenced by those of the epoxy; therefore, it is desirable for the epoxy to have a CTE that is close to that of the solder joints, a glass transition temperature that ensures dimensional stability during reliability testing, an elastic modulus that will not contribute to large stresses during thermal cycling, an elongation at break that is greater than 1 percent, and a low moisture absorption.
However, these properties are not present in a single epoxy.
Therefore, an epoxy formulation comprising a mixture of epoxies and filler has been invented to produce the photodefinable-stress compensation material.
By way of example, the photodefineable stress compensating material comprises a filled epoxy.
In accordance with one embodiment of the present invention, a photodefinable stress compensation material is formed by combining an epoxy, a diluent, a filler, and a photoinitiator
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