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Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
| Details |
Inventors: Xia, Li-Qun; Geiger, Fabrice; Gaillard, Frederic; Yieh, Ellie; Lim, Tian H.;
Assignee: Applied Materials, Inc. (Santa Clara, CA)
Primary Examiner: Elms; Richard
Assistant Examiner: Smith; Brad
Attorney, Agent or Firm: Townsend & Townsend & Crew
A method for providing a dielectric film having a low dielectric constant. The deposited film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. The low dielectric constant film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process. The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si--C) bond. During the deposition process the wafer is heated to a temperature less than 250.degree. C. and preferably to a temperature between 100-200.degree. C. Enhancements to the process include adding Boron and/or Phosphorus dopants, two step deposition, and capping the post cured layer. |
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DETAILED DESCRIPTION The method of the present invention provides such a new and improved low-k material deposition process.
The process is particularly useful in the manufacture of sub-0.
2 micron circuits as it can form a PMD or IMD film with a dielectric constant below 3.
0.
The film has good gap fill capabilities, high film stability and etches uniformly and controllably when subject to a chemical mechanical polishing (CMP) step.
The method of the present invention deposits a carbon-doped silicon oxide layer using a thermal, as opposed to plasma, CVD process.
The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si--C) bond.
During the deposition process, the substrate is heated to a temperature less than about 250.
degree.
C.
In some currently preferred embodiments the organosilane precursor has a formula of Si(CH.
sub.
3).
sub.
x H.
sub.
4-x where x is either 3 or 4 making the organosilane precursor either trimethylsilane (TMS) or tetramethylsilane (T4MS).
In other preferred embodiments, the substrate over which the carbon-doped oxide layer is deposited is heated to a temperature of between about 150-200.
degree.
C.
and the deposition is carried out in a vacuum chamber at a pressure of between 1-760 Torr.
In still other preferred embodiments, the carbon-doped silicon oxide layer is cured after it is deposited to minimize subsequent moisture absorption.
Curing can be done in either a vacuum or conventional furnace environment.
In one specific embodiment, the process gas is a mixture of TMS, ozone and helium.
Deposition pressure in this embodiment can be any pressure between 1-760 Torr, but the flow rate of the TMS source is selected so that the partial pressure of TMS is less than its vapor pressure in the deposition environment.
In a preferred version of this embodiment, after film deposition is substantially completed, the ozone flow into the deposition chamber is stopped at least several seconds prior to the flow of TMS in order to ensure that residual ozone in the chamber reacts, in the gas phase, with the TMS and not with carbon in the deposited film
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Semiconductor manufacture 
