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Method for forming a MOSFET with substrate source contact
Accordingly, it is an object of the present invention to provide an improved means and method for MOSFETS having a back-side source contact. It is a further object to ...
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Integrable MOS and IGBT devices having trench gate structure
OF ILLUSTRATIVE EMBODIMENTS FIG. 3 is a section view of a power MOSFET device in accordance with one embodiment of the invention, and FIG. 4 is a section view of an IGBT...
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Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current
I claim: 1. A trench MOSFET comprising: (a) at least one pedestal, that functions as a vertically-oriented body region, doped with a first conductivity type of dopant, ...
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Insulated gate static induction transistor and integrated circuit including same
Therefore, an object of the present invention is to provide an insulated-gate static induction transistor which can operate in the enhancement mode or the enhancement/...
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Mask surrogate semiconductor process employing dopant-opaque region
A general object of the present invention, therefore, is to provide a novel manufacturing procedure which is capable of reducing substantially the percentage likelihood ...
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High speed, low gate/drain capacitance DMOS device
It is a purpose of the present invention to provide a new and improved method of producing high speed, low gate/drain capacitance DMOS devices. It is a further purpose ...
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Method for the preparation of a pattern overlay accuracy-measuring mark
Therefore, it is an object of the present invention to overcome the above problems encountered in the prior art method of this type and to provide a method for the ...
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Power insulated-gate transistor having three terminals and a manufacturing method thereof
OF THE PREFERRED EMBODIMENTS FIGS. 2 illustrates the structure of an insulated-gate transistor in accordance with a first preferred embodiment of the present invention. ...
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High-voltage transistor and manufacturing method therefor
Therefore, it is an object of the present invention to provide a high-voltage transistor which can reduce layout space and improve performance characteristics thereof. I...
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Inelastic, heat-elasticizable sheet material for diapers
In FIG. 1, heat-shrinkable composite 10 comprises a plurality of parallel elastomeric strands, each stretched to several times its relaxed length, sandwiched between ...
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Semiconductor manufacture 
