Method and apparatus for applying a plurality of superposed layers to a web by curtain coating
We claim: 1. In a method of applying to a travelling web a plurality of layers of at least one flowable composition, comprising moving said web along a predetermined pathm, delivering such flowable co... Read More
Inventors: Kerkhofs, Jacques G.;, Assignee: AGFA-GEVAERT N.V. (Mortsel, BE) |
Process and apparatus for coating the surfaces of containers with a material
OF THE PREFERRED EMBODIMENTS Containers or bottles to be coated are conveyed along a suitable line (not shown) and then transferred by a loading means (not shown) into a coating plant such as shown i... Read More
Inventors: Katsuyama, Iwao; Okuzumi, Aijiro;, Assignee: Kyowa Denki Kagaku K.K. (Tokyo, JP) |
Non-woven fabric and method for producing same
It is a primary object of the present invention to eliminate the above drawbacks of the prior art and to provide a unique non-woven fabric and a method for producing the same, which fabric is highly r... Read More
Inventors: Murakami, Kakuji; Nakayama, Takashi; Morioka, Atsumi;, Assignee: Toray Industries, Inc. (Tokyo, JP) |
Fence wire location marker
A location indicator or marker for marking and indicating the location of substantially horizontally extending wires includes a generally planar tab or relatively thin, relatively stiff, but resilient... Read More
Inventors: Halsey, Larry L.;, Assignee: |
Process for fabricating a control gate for a floating gate FET
It is therefore, an object of the present invention to provide an improved method of fabricating a floating gate field effect transistor. A further object of the present invention is to provide a meth... Read More
Inventors: Wang, Hsingya A.;, Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA) |
Apparatus for mixing plastics
In general, the present invention consists of providing the mixing head with two plates mounted at a distance from each other and attached to the supply and return line. Between the plates is guided a... Read More
Inventors: Hartwig, Peter R.;, Assignee: Schloemann-Siemag Aktiengesellschaft (Dusseldorf, DT) |
Fluid spreading apparatus
In accordance with the present invention a new and improved fluid spreading apparatus is disclosed as including a non-swinging or fixed spray bar carried transversely on the back of a tank truck, and ... Read More
Inventors: Hill, Francis K.;, Assignee: |
Device in or for high-pressure cleaning units for heating the water by circulation
I claim: 1. High-pressure cleaning apparatus having two operating modes comprising: an ejection nozzle for discharging fluid; a high-pressure pump having delivery and suction sides; a return conduit b... Read More
Inventors: Ostergaard, Tage V.;, Assignee: Knud Erik Westergaard (Hadsund, DK) |
High voltage MOS structure
The present invention relates generally to insulated gate field effect transistors and more specifically to an improved high voltage insulated gate field effect transistor. Many MOS applications requi... Read More
Inventors: Beasom, James D.;, Assignee: Harris Corporation (Melbourne, FL) |
Method of making self-aligned remote polysilicon contacts
In accordance with the present invention, shallow source and drain contacts are produced by the steps of (1) depositing a polysilicon layer over the entire surface of a semiconductor device having sou... Read More
Inventors: Pasch, Nicholas F.; Kapoor, Ashok; Schinella, Richard D.;, Assignee: LSI Logic Corporation (Milpitas, CA) |
Self-aligned MOSFET gate/source/drain salicide formation
The present invention provides a method of fabricating a MOSFET device structure in a silicon substrate. The MOSFET device structure includes planarized trench isolation field oxide regions formed in ... Read More
Inventors: Naem, Abdalla Aly;, Assignee: National Semiconductor Corporation (Santa Clara, CA) |
Raised source/drain using recess etch of polysilicon
Accordingly, it is a primary object of the present invention to provide a preferred process for making logic devices with raised source/drain junctions using recess etch of polysilicon. A further obje... Read More
Inventors: Gambino, Jeffrey P.; Halle, Scott; Mandelman, Jack A.; Stephens, Jeremy K.;, Assignee: International Business Machines Corporation (Armonk, NY) |
Method of producing a metal oxide semiconductor device with raised source/drain
There is a need for a method of making a semiconductor device with raised source/drain structure, in a readily manufacturable process that is cost effective. This and other needs are met by an embodim... Read More
Inventors: Lin, Ming-Ren;, Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA) |
Method for forming shallow source/drain extension for MOS transistor
OF THE INVENTION". BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic diagram of a semiconductor device made according to the present invention, shown in combination with a digital processing appara... Read More
Inventors: Yu, Bin;, Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA) |
Laser texturing
The present invention is directed to providing a contactless technique for imparting a texture to a surface by promoting a chemical etching reaction between a gaseous ambient, such as a chlorofluoroca... Read More
Inventors: Russell, Stephen D.; Sexton, Douglas A.; Kelley, Eugene P.;, Assignee: The United States of America as represented by the Secretary of the Navy (Washington, DC) |
Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness
FIG. 2 shows a trenched DMOS transistor structure in accordance with the present invention. The substrate (drain) region 10 is in the lower portion of the semiconductor body and is N+ doped (in this ... Read More
Inventors: Hshieh, Fwu-Iuan; Chang, Mike F.; Ching, Lih-Ying; Ng, Sze H.; Cook, William;, Assignee: Siliconix incorporated (Santa Clara, CA) |
Semiconductor device and power converter using same
The semiconductor device according to the present invention has a pair of main surfaces. On one main surface side, the surface of a first semiconductor region of a first conduction type is in contact ... Read More
Inventors: Mori, Mutsuhiro; Yasuda, Yasumichi; Hosoya, Hiromi;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Self-aligned channel stop for trench-isolated island
In accordance with the present invention, the need to provide a separation region between the trench and a device region within the island, which results in an unwanted increase in occupation area, is... Read More
Inventors: Beasom, James D.;, Assignee: Harris Corporation (Melbourne, FL) |
DMOS power transistors with reduced number of contacts using integrated body-source connections
In accordance with the present invention, two topologically different microcells are provided. Each of these microcells is designed to reduce the total number of contacts per device in mid- to high-vo... Read More
Inventors: Bulucea, Constantin; Rossen, Rebecca;, Assignee: Siliconix Incorporated (Santa Clara, CA) |
Trench depletion MOSFET
The present invention is a trench power MOSFET with a unique structure which overcomes the above-noted deficiencies of the prior art. Advantageously, the present invention, like the trench power MOSFE... Read More
Inventors: Ajit, Janardhanan S.;, Assignee: International Rectifier Corporation (El Segundo, CA) |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST*** *** NO IMAGES AVAILABLE***
Description:... Read More
Inventors: , Assignee: |
Method for forming a MOSFET with substrate source contact
Accordingly, it is an object of the present invention to provide an improved means and method for MOSFETS having a back-side source contact. It is a further object to provide an improved means and met... Read More
Inventors: Johnsen, Robert J.; Sanders, Paul W.;, Assignee: Motorola Inc. (Schaumburg, IL) |
Integrable MOS and IGBT devices having trench gate structure
OF ILLUSTRATIVE EMBODIMENTS FIG. 3 is a section view of a power MOSFET device in accordance with one embodiment of the invention, and FIG. 4 is a section view of an IGBT device in accordance with one... Read More
Inventors: Gilbert, Percy V.; Neudeck, Gerold W.;, Assignee: Purdue Research Foundation (West Lafayette, IN) |
Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current
I claim: 1. A trench MOSFET comprising: (a) at least one pedestal, that functions as a vertically-oriented body region, doped with a first conductivity type of dopant, extending in a direction from a ... Read More
Inventors: Rumennik, Vladimir;, Assignee: |
Insulated gate static induction transistor and integrated circuit including same
Therefore, an object of the present invention is to provide an insulated-gate static induction transistor which can operate in the enhancement mode or the enhancement/depletion mode. Another object of... Read More
Inventors: Nishizawa, Jun-ichi; Ohmi, Tadahiro;, Assignee: Zaidan Hojin Handotai Kenkyu Shinkokai (Sendai, JP) |
Mask surrogate semiconductor process employing dopant-opaque region
A general object of the present invention, therefore, is to provide a novel manufacturing procedure which is capable of reducing substantially the percentage likelihood that a fatal defect will occur ... Read More
Inventors: Hollinger, Theodore G.;, Assignee: Advanced Power Technology, Inc. (Bend, OR) |
High speed, low gate/drain capacitance DMOS device
It is a purpose of the present invention to provide a new and improved method of producing high speed, low gate/drain capacitance DMOS devices. It is a further purpose of the present invention to prov... Read More
Inventors: Tsoi, Hak-Yam;, Assignee: Motorola, Inc. (Schaumburg, IL) |
Method for the preparation of a pattern overlay accuracy-measuring mark
Therefore, it is an object of the present invention to overcome the above problems encountered in the prior art method of this type and to provide a method for the preparation of a pattern overlay acc... Read More
Inventors: Bae, Sang M.;, Assignee: Hyundai Electronics Industries Co., Ltd. (Kyoungki-do, KR) |
Power insulated-gate transistor having three terminals and a manufacturing method thereof
OF THE PREFERRED EMBODIMENTS FIGS. 2 illustrates the structure of an insulated-gate transistor in accordance with a first preferred embodiment of the present invention. According to the present inven... Read More
Inventors: Yun, Chong-Man; Han, Min-Koo; Oh, Kwang-Hoon; Kim, Deok-Joong;, Assignee: Samsung Electronics Co., Ltd. (Suwon, KR) |
High-voltage transistor and manufacturing method therefor
Therefore, it is an object of the present invention to provide a high-voltage transistor which can reduce layout space and improve performance characteristics thereof. It is another object of the pres... Read More
Inventors: Kim, Jhang-rae;, Assignee: Samsung Electronics Co., Ltd. (Kyungki-Do, KR) |
Semiconductor manufacture 
