Iron-doped indium phosphide semiconductor laser

DETAILED DESCRIPTION An iron-doped III-V compound semiconductor laser operable in the 2 .
mu.
m to 3 .
mu.
m wavelength range.
Crystalline GaAs or InP semiconductors are doped with iron or another transition metal during their formation such that the iron ions are uniformly dispersed throughout the semiconductor.
The iron ions are excited so that the semiconductor emits light at an output wavelength which depends upon the characteristic excited state configuration of the iron ions.
Such a structure is simple to produce since the iron ions are added during the growth of the semiconductor crystal.
It has been determined that the iron ion concentration in InP may be as high as 2.
times.
10.
sup.
17 iron ions per cubic centimeter.