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Method of making a stacked thin film assembly
| Details |
Inventors: Mizobuchi, Koichi; Sugiura, Toshihiro;
Assignee: Texas Instruments Incorporated (Dallas, TX)
Primary Examiner: Bowers, Jr.; Charles L.
Assistant Examiner: Paladugu; Ramamohan Rao
Attorney, Agent or Firm: Donaldson; Richard L., Kempler; William B.
A stacked film assembly for use as wiring in a semiconductor device having a bottom film (CVD-W film) 33 and a top film (Al alloy film) 12, where the surface roughness (Ra) of the bottom film is less than 100 .ANG. and the crystal orientation of the top film formed on this surface is controlled, a CVD method for the making thereof, and a semiconductor device in which the stacked film assembly is employed. Even when there is no lattice matching of the bottom film and the top film, crystal orientation of the top film can be sufficiently controlled to provide a targeted face ((111) face with aluminum film), and in particular it will be possible to readily form a stacked film assembly having a satisfactory barrier function as well as sufficient EM resistance and with good film formation. |
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DETAILED DESCRIPTION In short, this invention pertains to a stacked film assembly made with a stacked structure having a bottom film and a top film.
The surface roughness (Ra) of the bottom film will be less than 100 .
ANG.
, and the crystal orientation of the top film as formed on the surface of the bottom film will be controlled.
In investigating stacked film assemblies, particularly using aluminum film (actually, these may be alloy films that contain small quantities of Si and Cu) as the top film, it has been discovered, in accordance with the invention, that even when there is no lattice matching of the bottom layer to the aluminum film, as there is with TiN, by keeping the surface roughness (Ra) of the bottom layer in a specific range, i.
e.
, less than 100 .
ANG.
, crystal orientation of the top layer can be controlled to what is targeted ((111) face, with aluminum film).
For example, when tungsten film that can be formed with chemical vapor deposition (CVD-W) is formed as the bottom film, the crystal structure of this CVD-W film will have a body centered cubic construction: BCC (lattice constant of 3.
165 .
ANG.
different from that of the aluminum and its crystal direction will be a mix of (110) and (200).
Regardless of the fact that, with no lattice matching with the aluminum (111) crystal face, control of the aluminum crystal orientation is not possible by controlling the crystal orientation of the bottom film as described above, it has been established, in accordance with the invention, that the aluminum (111) crystal face orientation depends on the surface roughness Ra of the CVD-W film that serves as the bottom film.
In short, X-ray diffraction intensity of the top film Al (111) face changes depending on the surface roughness Ra of the CVD-W film serving as the bottom film, as shown in FIGS.
1 and 2.
In particular, when the surface roughness Ra of the CVD-W film is kept at less than 100 .
ANG.
(10 nm), the X-ray diffraction intensity of the Al (111) face is greatly increased.
In other words, Al (111) face crystal orientation is increased, and sufficient EM resistance can be realized
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